2SK1835 - Hitachi Semiconductor

2SK1835 Silicon N-Channel MOSFET

2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute Maximum Ratings (Ta = 25°.

Features

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• High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 1500 ±20 .