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2SK1835 |
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| Part Number | 2SK1835 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | 2SK1835 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitabl... |
| Features |
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) REJ03G0978-0400 Rev.4.00 Jun 04, 2008 D 1 2 3 G S 1. Gate 2. Drain (Flange) 3. Source REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6 2SK1835 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty c... |
| Document |
 2SK1835 Data Sheet
PDF 128.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1830 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1833 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|