TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package Marking Equivalent Circuit 2SK1830 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source volta.
ility upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 Electrical Characteristics (Ta = 25°C) 2SK1830 Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET | |
2 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1833 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK1833 |
Panasonic |
Silicon N-Channel MOSFET | |
6 | 2SK1834 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK1834 |
Panasonic |
Silicon N-Channel Power F-MOS | |
8 | 2SK1835 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK1835 |
Renesas |
Silicon N-Channel MOSFET | |
10 | 2SK1836 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK1837 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK1837 |
INCHANGE |
N-Channel MOSFET |