2SK1832 - Hitachi Semiconductor

2SK1832 Silicon N-Channel MOSFET

2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = 25°C) Item Drain.

Features

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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage K1831 K1832 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 10 30 .