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·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Diving circuit for a solenoid and motor ·Control equipment ·Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source.
e VGS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= 25V; ID=1mA 2.0 5.0 V VDF Body to drain diode forward voltage IS= 2.5A, VGS = 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A 3.2 4.0 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 1 μA Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=20V; VGS=0V; fT=1MHz 300 400 20 23 pF 55 48 ton Turn-on Time tf Fall Time VGS=10V; ID=1.5A; VDD=150V; 40 30 ns toff Turn-off Time RL=100Ω .
2SK1833 - Panasonic
Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1830 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1834 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1834 |
Panasonic |
Silicon N-Channel Power F-MOS |
|
| 7 | 2SK1835 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | 2SK1835 |
Renesas |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1836 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | 2SK1837 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | 2SK1837 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | 2SK1838 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|