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·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Diving circuit for a solenoid and motor ·Control equipment ·Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Vo.
S= 0; ID= 1mA 800 V VGS(th) Gate Threshold Voltage VDS= 25V; ID=1mA 2.0 5.0 V VDF Body to drain diode forward voltage IS = 2A, VGS = 0 1.3 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1A 4.8 7 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±1 μA IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 1 mA Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=20V; VGS=0V; fT=1MHz 350 25 pF 60 ton Turn-on Time tf Fall Time VGS=10V; ID=1A; VDD=200V; 35 25 ns toff Turn-off Time RL=200Ω 60 NOTICE： ISC reserves th.
2SK1834 - Panasonic
Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed : EAS > 15m.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1830 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1833 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK1833 |
Panasonic |
Silicon N-Channel MOSFET |
|
| 7 | 2SK1835 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | 2SK1835 |
Renesas |
Silicon N-Channel MOSFET |
|
| 9 | 2SK1836 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | 2SK1837 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | 2SK1837 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | 2SK1838 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|