2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1838(L), 2SK1838(S) Absolute Maximum Rat.
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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK1838(L), 2SK1838(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 250 ±30 1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET | |
2 | 2SK1830 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1833 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK1833 |
Panasonic |
Silicon N-Channel MOSFET | |
7 | 2SK1834 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK1834 |
Panasonic |
Silicon N-Channel Power F-MOS | |
9 | 2SK1835 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK1835 |
Renesas |
Silicon N-Channel MOSFET | |
11 | 2SK1836 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK1837 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |