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2SK1835 |
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| Part Number | 2SK1835 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitab... |
| Features |
• • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1835 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 ±20 ... |
| Document |
 2SK1835 Data Sheet
PDF 48.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1830 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1833 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|