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2SK1833 |
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| Part Number | 2SK1833 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Diving ... |
| Features |
e
VGS= 0; ID= 1mA
500
V
VGS(th) Gate Threshold Voltage
VDS= 25V; ID=1mA
2.0
5.0
V
VDF
Body to drain diode forward voltage IS= 2.5A, VGS = 0
1.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 1.5A
3.2
4.0
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
1
μA
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=20V; VGS=0V; fT=1MHz
300
400
20
23
pF
55
48
ton
Turn-on Time
tf
Fall Time
VGS=10V; ID=1.5A; VDD=150V;
40
30
ns
toff
Turn-off Time
RL=100Ω
... |
| Document |
 2SK1833 Data Sheet
PDF 215.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1830 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1833 |
Panasonic |
Silicon N-Channel MOSFET |
|