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2SK1833 |
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| Part Number | 2SK1833 |
| Manufacturer | Panasonic |
| Description | Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary break... |
| Features |
q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS*
500 ±30 ±2.5 ±5 15.6
Allowable power dissipation
TC = 25°C Ta = 25°C PD
40 2
Channel temperature Storage temperature
... |
| Document |
 2SK1833 Data Sheet
PDF 43.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK183 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 2 | 2SK1830 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK1831 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1832 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK1833 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|