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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A) • Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=3A) • Monolithic Consturction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm JZfc5.0MAX ,. jZfel.OMAX + 0.09 0LO-O.O.
• High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A)
• Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=3A)
• Monolithic Consturction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
JZfc5.0MAX
,.
jZfel.OMAX
+ 0.09 0LO-O.O3
30.2 x 0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
BASEo-
SYMBOL VCBO v CEO VEBO IC IB PC
Tstg
RATING 80 80
UNIT V
0.2 50
15.
2SD523 - Inchange Semiconductor
·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Vol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD524 |
Toshiba |
NPN Transistor |
|
| 2 | 2SD525 |
Toshiba |
NPN Transistor |
|
| 3 | 2SD525 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD525 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 5 | 2SD526 |
Toshiba Semiconductor |
NPN Transistor |
|
| 6 | 2SD526 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD526 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 8 | 2SD529 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD5011 |
Inchange Semiconductor |
Power Transistor |
|
| 10 | 2SD504 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD5041 |
USHA |
Transistors |
|
| 12 | 2SD506 |
INCHANGE |
NPN Transistor |
|