2SD506 - INCHANGE

2SD506 NPN Transistor

·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.

Features

RAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA VBE(on) Base-Emitter On voltage IC= 6A ; VCE= 3V ICEO Collector Cutoff current ICBO Collector Cutoff current IEBO Emitter Cut-off current VCE= 50V; IB= 0 VCB= 100V;IE= 0 VCB= 100V;IE= 0;TC= 150℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 6A ; VCE= 3V hFE-2 DC Current Gain IC= 12A ; VCE= 3V COB Output Capacitance IE=0 ; VCB= 10V;ftest= 0.1MHz MIN MAX UNIT 100 V.