·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .
ETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA VBE(on) Base-Emitter On voltage IC= 6A ; VCE= 3V ICEO Collector Cutoff current ICBO Collector Cutoff current IEBO Emitter Cut-off current VCE= 30V; IB= 0 VCB= 60V;IE= 0 VCB= 60V;IE= 0;TC= 150℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 6A ; VCE= 3V hFE-2 DC Current Gain IC= 12A ; VCE= 3V COB Output Capacitance IE=0 ; VCB= 10V;ftest= 0.1MHz MIN MAX UNIT 60 V 2.0 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD5011 |
Inchange Semiconductor |
Power Transistor | |
2 | 2SD5041 |
USHA |
Transistors | |
3 | 2SD506 |
INCHANGE |
NPN Transistor | |
4 | 2SD5070 |
Inchange Semiconductor |
Power Transistor | |
5 | 2SD5071 |
SavantIC |
Silicon NPN Power Transistors | |
6 | 2SD5071 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
7 | 2SD5072 |
Fairchild |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR | |
8 | 2SD5072 |
Savantic |
Silicon NPN Power Transistors | |
9 | 2SD5072 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
10 | 2SD5074 |
Inchange Semiconductor |
Power Transistor | |
11 | 2SD5075 |
INCHANGE |
NPN Transistor | |
12 | 2SD5075 |
Savantic |
Silicon NPN Power Transistors |