2SD524 - Toshiba

2SD524 NPN Transistor

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) _ HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min. ) (V CE=3V, I C=5A) • Low Saturation Voltage : VCE (sat)=l- 5v dc=5A) • Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARA.

Features

• High DC Current Gain : h FE=2000 (Min. ) (V CE=3V, I C=5A)
• Low Saturation Voltage : VCE (sat)=l- 5v dc=5A)
• Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL VcBO VCEO VEBO IB ?C L stg RATING 80 80 UNIT V 15 0.2 100 150 -65^150 -COLLECTOR L BASE 2. EMITTER COLLECTOR (.