2SD529 - INCHANGE

2SD529 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 320V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in operating in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET.

Features

SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A ICES Collector Cutoff Current VCE= 850V; VBE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V, f= 1.0MHz Switching Times ton Turn-On Time ts.