2SD5011 - Inchange Semiconductor

2SD5011 Power Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle.

Features

ector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A ;IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 130 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage tf Fall Time IF= 3.5A IC= 3A, IB1= 0.8A; IB2= -1.6A RL= 66.7Ω;VCC= 200V 2.0 V 0.4 us NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.