2SD523 Inchange Semiconductor Silicon NPN Darlington Power Transistor Datasheet, en stock, prix

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2SD523

Inchange Semiconductor
2SD523
2SD523 2SD523
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Part Number 2SD523
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 1.5V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust ...
Features own IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff Current VCE= 80V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A, VCE= 3V hFE-2 DC Current Gain IC= 7A, VCE= 3V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A, IB1= -IB2=6mA; VCC= 45V; RL= 15Ω 2SD523 MIN TYP. MAX UNIT 80 V 0.9 1.5 V 1.2 2.0 V 1.5 2.5 V 0.1 mA 3.0 mA 2000 15000 ...

Document Datasheet 2SD523 Data Sheet
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