2SD523 |
Part Number | 2SD523 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A) • Low Saturation Voltage : vCE(sat)=l-5V ... |
Features |
• High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A) • Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=3A) • Monolithic Consturction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm JZfc5.0MAX ,. jZfel.OMAX + 0.09 0LO-O.O3 30.2 x 0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASEo- SYMBOL VCBO v CEO VEBO IC IB PC Tstg RATING 80 80 UNIT V 0.2 50 15... |
Document |
2SD523 Data Sheet
PDF 104.18KB |
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