Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic.
arameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.1mA IF=200mA VR=10V Min. 30 --Max. -0.50 30 Unit V V µA www.DataSheet4U.com HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.09.18 Page 1 of 1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB035100ML |
Silan Microelectronics |
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS | |
2 | 2SB030070MLJY |
Silan Microelectronics |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS | |
3 | 2SB0709A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
4 | 2SB0710 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
5 | 2SB0710A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
6 | 2SB0766 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
7 | 2SB0766A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
8 | 2SB0774 |
Panasonic |
Silicon PNP epitaxial planar type Transistors | |
9 | 2SB0819 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
10 | 2SB0873 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
11 | 2SB0928 |
Panasonic Semiconductor |
Power Transistors | |
12 | 2SB0928A |
Panasonic Semiconductor |
Power Transistors |