2SB0819 - Panasonic Semiconductor

2SB0819 Silicon PNP epitaxial planar type Transistor

www.DataSheet4U.com Transistors 2SB0819 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 3.5±0.1 2.5±0.1 (1.0) (1.0) 2.0±0.2 2.4±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector op.

Features

1 2SB0819 PC  Ta 1.2 IC  VCE Ta = 25°C IB = −40 mA −35 mA −3.5 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 Collector power dissipation PC (W) 1.0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness −4.0 Collector current IC (A) −3.0 −2.5 −2.0 −1.5 −1.0 0.8 −30 mA −25 mA −20 mA −15 mA −10 mA −5 mA −10 0.6 −1 Ta = 75°C 25°C −25°C 0.4 − 0.1 0.2 − 0.5 0 −2 −4 −6 −8 −10 0 0 20 40 60 80 100 120 140 160 0 − 0.01 − 0.01 − 0.1 −1 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector.