www.DataSheet4U.com Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open.
• Low collector-emitter saturation voltage VCE(sat)
• Large collector current IC
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −30 −20 −7 −5 −10 1 150 −55 to +150 Unit V V
1 2 3 0.45+0.2
–0.1 (1.27) (1.27) 0.45+0.2
–0.1
13.5±0.5
0.7+0.3
–0.2
0.7±0.1
8.6±0.2
V A A W °C °C
2.54±0.15
1: Emitter 2:.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB0819 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
2 | 2SB030070MLJY |
Silan Microelectronics |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS | |
3 | 2SB035030MLJY |
Silan Microelectronics |
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS | |
4 | 2SB035100ML |
Silan Microelectronics |
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS | |
5 | 2SB0709A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
6 | 2SB0710 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
7 | 2SB0710A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
8 | 2SB0766 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
9 | 2SB0766A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
10 | 2SB0774 |
Panasonic |
Silicon PNP epitaxial planar type Transistors | |
11 | 2SB0928 |
Panasonic Semiconductor |
Power Transistors | |
12 | 2SB0928A |
Panasonic Semiconductor |
Power Transistors |