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Ø 2SB035100ML is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic c.
eters Reverse Voltage Forward Voltage Symbol VBR VF1 VF2 VF3 Reverse Current www.DataSheet4U.com IR IR Test Conditions IR=100µA IF=0.1mA IF=10mA IF=250mA VR=50V VR=75V Min. 100 -----Max. -0.25 0.45 1 2 5 Unit V V V V µA µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.08.21 Page 1 of 1 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB035030MLJY |
Silan Microelectronics |
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS |
|
| 2 | 2SB030070MLJY |
Silan Microelectronics |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS |
|
| 3 | 2SB0709A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 4 | 2SB0710 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 5 | 2SB0710A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 6 | 2SB0766 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 7 | 2SB0766A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 8 | 2SB0774 |
Panasonic |
Silicon PNP epitaxial planar type Transistors |
|
| 9 | 2SB0819 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 10 | 2SB0873 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 11 | 2SB0928 |
Panasonic Semiconductor |
Power Transistors |
|
| 12 | 2SB0928A |
Panasonic Semiconductor |
Power Transistors |
|