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Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circui.
Reverse Voltage Forward Voltage Symbol VBR VF Test Conditions IR=8µA IF=1.0mA IF=10mA IF=15mA Reverse Current IR VR=50V VR=70V --Min. 70 Max. -0.40 0.71 0.95 0.08 8 V Unit V µA www.DataSheet4U.com HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.10.15 Page 1 of 1 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB035030MLJY |
Silan Microelectronics |
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS |
|
| 2 | 2SB035100ML |
Silan Microelectronics |
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS |
|
| 3 | 2SB0709A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 4 | 2SB0710 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 5 | 2SB0710A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 6 | 2SB0766 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 7 | 2SB0766A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 8 | 2SB0774 |
Panasonic |
Silicon PNP epitaxial planar type Transistors |
|
| 9 | 2SB0819 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 10 | 2SB0873 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 11 | 2SB0928 |
Panasonic Semiconductor |
Power Transistors |
|
| 12 | 2SB0928A |
Panasonic Semiconductor |
Power Transistors |
|