2SB035030MLJY |
Part Number | 2SB035030MLJY |
Manufacturer | Silan Microelectronics |
Description | Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protectio... |
Features |
arameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.1mA IF=200mA VR=10V Min. 30 --Max. -0.50 30 Unit V V
µA
www.DataSheet4U.com
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.09.18 Page 1 of 1
... |
Document |
2SB035030MLJY Data Sheet
PDF 39.39KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB035100ML |
Silan Microelectronics |
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS | |
2 | 2SB030070MLJY |
Silan Microelectronics |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS | |
3 | 2SB0709A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
4 | 2SB0710 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
5 | 2SB0710A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |