Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1..
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC
* Tj Tstg Symbol VCBO
(Ta=25˚C)
Ratings
–30
–60
–25
–50
–5
–1.5
–1 1 150
–55 ~ +150 1cm2 Unit V
45°
1.0
–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0
–0.20
0.4±0.04
emitter voltage 2SB766A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC
–62 Mini Power Type Package
marking
Marking symbol :
Printed circu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB0766 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SB0709A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
3 | 2SB0710 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
4 | 2SB0710A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
5 | 2SB0774 |
Panasonic |
Silicon PNP epitaxial planar type Transistors | |
6 | 2SB030070MLJY |
Silan Microelectronics |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS | |
7 | 2SB035030MLJY |
Silan Microelectronics |
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS | |
8 | 2SB035100ML |
Silan Microelectronics |
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS | |
9 | 2SB0819 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
10 | 2SB0873 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
11 | 2SB0928 |
Panasonic Semiconductor |
Power Transistors | |
12 | 2SB0928A |
Panasonic Semiconductor |
Power Transistors |