Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A I Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25.
• Large collector current IC
• Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1
0.40+0.10
–0.05 3
0.16+0.10
–0.06
1.50+0.25
–0.05
2.8+0.2
–0.3
2
(0.95) (0.95) 1.9±0.1 2.90+0.20
–0.05 10°
1.1+0.2
–0.1
Parameter Collector to base voltage Collector to emitter voltage 2SB0710 2SB0710A 2SB0710 2SB0710A
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating − 30 − 60 − 25 − 50 −5 −1 −500 200 150 −55 to +150
Unit V
V
1: Base 2: Emitter 3: Collector
0 to 0.1
1.1+0.3
–0.1
I Absolute Maximum Ratings Ta = 25°C
(0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB0710 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SB0709A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
3 | 2SB0766 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
4 | 2SB0766A |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
5 | 2SB0774 |
Panasonic |
Silicon PNP epitaxial planar type Transistors | |
6 | 2SB030070MLJY |
Silan Microelectronics |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS | |
7 | 2SB035030MLJY |
Silan Microelectronics |
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS | |
8 | 2SB035100ML |
Silan Microelectronics |
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS | |
9 | 2SB0819 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
10 | 2SB0873 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
11 | 2SB0928 |
Panasonic Semiconductor |
Power Transistors | |
12 | 2SB0928A |
Panasonic Semiconductor |
Power Transistors |