16N50H - KIA

16N50H N-CHANNEL MOSFET

This power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, ac.

Features

n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 6 Function Gate Drain Source Rev 1.3 SEP 2014 KIA SEMICONDUCTORS 16A，500V N-CHANNEL MOSFET 4. Absolute maximum ratings 16N50H Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current continuous TC=25ºC TC=100ºC ID Drain current pulsed (note1) IDm Avalanche energy R.