www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 68 17.6 21.8 Single TO-220AB TO-220 FULLPAK 0.38 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Co.
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
S D G D2PAK (TO-263)
GDS
G
GD S
S N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
SiHP16N50C-E3
Lead (Pb)-free
-
-
D2PAK (TO-263) SiHB16N50C-E3 SiHB16N50CTR-E3 SiHB16N50CTL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a Pulsed Dra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 16N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 16N50-TC |
UTC |
N-CHANNEL MOSFET | |
3 | 16N50C3 |
Infineon Technologies |
Power Transistor | |
4 | 16N50H |
KIA |
N-CHANNEL MOSFET | |
5 | 16N03L |
Fairchild Semiconductor |
RFD16N03L | |
6 | 16N05 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
7 | 16N06G |
Kexin |
N-Channel Trench Power MOSFET | |
8 | 16N06LE |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET | |
9 | 16N15 |
Fairchild Semiconductor |
FQP16N15 | |
10 | 16N25 |
Fairchild Semiconductor |
FQP16N25 | |
11 | 16N25E |
Motorola |
MTB16N25E | |
12 | 16N60 |
nELL |
N-Channel Power MOSFET |