16N50C3 - Infineon Technologies

16N50C3 Power Transistor

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-.

Features

verse diode dv/dt 6) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 16 161) 10 101) 48 48 460 460 0.64 0.64 16 16 ±20 ±20 ±30 ±30 160 34 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.2 page 1 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 16 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature,.