This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A
• Low Gate Charge (Typ. 27 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and St.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 16N25E |
Motorola |
MTB16N25E | |
2 | 16N03L |
Fairchild Semiconductor |
RFD16N03L | |
3 | 16N05 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | 16N06G |
Kexin |
N-Channel Trench Power MOSFET | |
5 | 16N06LE |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET | |
6 | 16N15 |
Fairchild Semiconductor |
FQP16N15 | |
7 | 16N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
8 | 16N50-TC |
UTC |
N-CHANNEL MOSFET | |
9 | 16N50C |
Vishay Siliconix |
Power MOSFET | |
10 | 16N50C3 |
Infineon Technologies |
Power Transistor | |
11 | 16N50H |
KIA |
N-CHANNEL MOSFET | |
12 | 16N60 |
nELL |
N-Channel Power MOSFET |