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The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, server/telecom power, FPD.
RDS(ON) = 0.17Ω @ VGS = 10V Ultra low gate charge(52.3nC max.) Low reverse transfer capacitance (C RSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G D S TO-3PB (16N60B) D (Drain) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 16 600 0.17 @ V GS = 10V 52.3 G (Gate) S (Source) www.nellsemi.com Page 1 of 10 SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PARAMETER Drai.
16N60 - Fairchild Semiconductor
SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charg.
16N60 - IXYS
Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 16N60-ML |
UTC |
N-CHANNEL POWER MOSFET |
|
| 2 | 16N65K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | 16N65M2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | 16N03L |
Fairchild Semiconductor |
RFD16N03L |
|
| 5 | 16N05 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | 16N06G |
Kexin |
N-Channel Trench Power MOSFET |
|
| 7 | 16N06LE |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET |
|
| 8 | 16N15 |
Fairchild Semiconductor |
FQP16N15 |
|
| 9 | 16N25 |
Fairchild Semiconductor |
FQP16N25 |
|
| 10 | 16N25E |
Motorola |
MTB16N25E |
|
| 11 | 16N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 12 | 16N50-TC |
UTC |
N-CHANNEL MOSFET |
|