SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Features ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V.
ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal Resistance.Junction- to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 60 ±20 20 14 80 2.5 1.6 50 150 -55 to 150 Unit V A W ć/W ć www.kexin.com.c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 16N06LE |
Fairchild Semiconductor |
N-Channel Logic Level Power MOSFET | |
2 | 16N03L |
Fairchild Semiconductor |
RFD16N03L | |
3 | 16N05 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | 16N15 |
Fairchild Semiconductor |
FQP16N15 | |
5 | 16N25 |
Fairchild Semiconductor |
FQP16N25 | |
6 | 16N25E |
Motorola |
MTB16N25E | |
7 | 16N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
8 | 16N50-TC |
UTC |
N-CHANNEL MOSFET | |
9 | 16N50C |
Vishay Siliconix |
Power MOSFET | |
10 | 16N50C3 |
Infineon Technologies |
Power Transistor | |
11 | 16N50H |
KIA |
N-CHANNEL MOSFET | |
12 | 16N60 |
nELL |
N-Channel Power MOSFET |