Data Sheet RFD16N06LESM October 2013 N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica.
• 16A, 60V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL Circ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 16N06G |
Kexin |
N-Channel Trench Power MOSFET | |
2 | 16N03L |
Fairchild Semiconductor |
RFD16N03L | |
3 | 16N05 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | 16N15 |
Fairchild Semiconductor |
FQP16N15 | |
5 | 16N25 |
Fairchild Semiconductor |
FQP16N25 | |
6 | 16N25E |
Motorola |
MTB16N25E | |
7 | 16N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
8 | 16N50-TC |
UTC |
N-CHANNEL MOSFET | |
9 | 16N50C |
Vishay Siliconix |
Power MOSFET | |
10 | 16N50C3 |
Infineon Technologies |
Power Transistor | |
11 | 16N50H |
KIA |
N-CHANNEL MOSFET | |
12 | 16N60 |
nELL |
N-Channel Power MOSFET |