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16N50H |
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| Part Number | 16N50H |
| Manufacturer | KIA |
| Description | This power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor... |
| Features |
n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
1 of 6
Function Gate Drain Source
Rev 1.3 SEP 2014
KIA
SEMICONDUCTORS
16A，500V N-CHANNEL MOSFET
4. Absolute maximum ratings
16N50H
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current continuous
TC=25ºC TC=100ºC
ID
Drain current pulsed (note1)
IDm
Avalanche energy
R... |
| Document |
 16N50H Data Sheet
PDF 317.05KB |
| Distributor | Stock | Price | Buy |
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