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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS V.
·Drain Current ID= 11A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.1Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
900 ±30
V V
ID Drain Current-Continuous
11 A
IDM Drain Current-Single Plused
44 A
PD Total Dissipation @TC=25℃
160 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Th.
11N90 - Unisonic Technologies
The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 11N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 2 | 11N06LT |
NXP Semiconductors |
PHB11N06LT |
|
| 3 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN |
|
| 4 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | 11N40C |
Fairchild Semiconductor |
FQP11N40C |
|
| 6 | 11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | 11N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 11N50-CB |
UTC |
N-CHANNEL MOSFET |
|
| 9 | 11N50E |
Philips |
PowerMOS transistors |
|
| 10 | 11N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 11 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | 11N60C2 |
Infineon |
Power Transistor |
|