Siemens Semiconductor Group PM fiche technique

No.	Partie #	Fabricant	Description
1	BSP129	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown v
2	BSS100	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10 V VGS = 0 V, ID = 0.25 mA, Tj =
3	BSS145	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor JA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 65 2 0.
4	BSS89	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor aracteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 10 4.5 5.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v
5	BSP92	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo
6	Q-67106-H6514	Siemens Semiconductor Group	PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Pin Definitions and Function
7	BSS149	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor fied. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 200 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage cu
8	PMB2306T	Siemens Semiconductor Group	PLL-Frequency Synthesizer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Pin Definitions and Function
9	BSP123	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo
10	BSP125	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor (N channel Enhancement mode) K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-
11	BSP372	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol
12	BSP89	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor JA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage
13	BSS131	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Val
14	BSS84	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -1.5
15	BS170	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.4 0.05 1 2.5 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate volt
16	BSP171	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- sour
17	BSP373	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor A RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage
18	BSS119	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor JA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 2 2
19	BSS125	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor racteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 600 2 10 8 10 30 2.5 100 50 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshol
20	BSS129	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor Group 1 04.97 BSS 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-s