Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BSS119 |
Click to view a larger image
| Part Number | BSS119 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 119 Type BSS 119 VDS 100 V ID 0.17 A RDS(on) 6Ω Package SOT-2... |
| Features |
JA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 2 2.6
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.6
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
0.1 2 10 4 6 1 60
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
100
nA Ω 6 10
VGS = 20 V, VDS = 0 V
Drain-Source ... |
| Document |
 BSS119 Data Sheet
PDF 134.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSS110 |
Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 2 | BSS110 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 3 | BSS110 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|
| 4 | BSS119 |
INFINEON |
SIPMOS Small-Signal Transistor |
|
| 5 | BSS119N |
Infineon Technologies |
Small-Signal-Transistor |
|