BSP125 |
Part Number | BSP125 |
Manufacturer | Siemens Semiconductor Group |
Description | BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSP 125 Type BSP 125 BSP 125 Pin 2 D Pin 3 S Pin 4 D VDS 600 V ID 0.12 A RDS(on) 4... |
Features |
K/W Unit °C
Tj Tstg RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
600 2 10 8 10 30 2.5 100 50 100
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.5
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
nA µA nA Ω 45
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS RDS(on)... |
Document |
BSP125 Data Sheet
PDF 175.71KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP120 |
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2 | BSP121 |
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3 | BSP122 |
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N-channel enhancement mode vertical D-MOS transistor | |
4 | BSP123 |
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SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
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