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BSP123 |
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| Part Number | BSP123 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSP 123 Type BSP 123 Pin 2 D Pin 3 S Pin 4 D VDS 100 V ID 0.38 A RDS(on) ... |
| Features |
g RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 1.5 0.1 10 10 4 6 2 1 100 10 50
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA nA Ω 6 10
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 20 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage ... |
| Document |
 BSP123 Data Sheet
PDF 160.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
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| 2 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
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| 3 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
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| 4 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
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| 5 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
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