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BSS129 |
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| Part Number | BSS129 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIPMOS® Small-Signal Transistor BSS 129 q q q q q q q VDS 240 V ID 0.15 A RDS(on) 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code T... |
| Features |
Group
1
04.97
BSS 129
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 240 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.014 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.25 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1... |
| Document |
 BSS129 Data Sheet
PDF 282.37KB |
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