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BSS125 |
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| Part Number | BSS125 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSS 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSS 125 Type BSS 125 BSS 125 BSS 125 Pin 2 D Marking SS125 Pin 3 S VDS 600 V ID 0.1 ... |
| Features |
racteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
600 2 10 8 10 30 2.5 100 50 100
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.5
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
nA µA nA Ω 45
VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.1 A
Semiconductor Group
2
12/05/1997
BSS 125
Electrical Char... |
| Document |
 BSS125 Data Sheet
PDF 78.12KB |
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