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Features
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specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 1.4 0.05 1 2.5 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
0.5 5
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
10
nA Ω 5
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.2 A
Semiconductor Group
2
12/05/1997
BS 170
Electrical Characteristics, at Tj = 25°C, unless otherwise specifie...
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BS170 Data Sheet
