| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Field Stop Trench IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • RoHS Compliant General Description Using innovative |
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ON Semiconductor |
N-Channel IGBT • Maximum Junction Temperature TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Smooth and Optimized Switching • Low Switching Loss • RoHS Compliant Applications • Solar Inverter • UPS • Energy St |
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Fairchild Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant June 2014 General Description Using novel field stop IGBT technology, Fairchild’s new series o |
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ON Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A • Fast Switching • Tighten Parameter Distribution • Th |
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ON Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching: EOFF = 10 mJ/A • RoHS Compliant Applications • Solar Inverter, UPS, Welder, SMPS, PFC ABSOLUTE MAXIMUM RATINGS Symbol Paramet |
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ON Semiconductor |
IGBT a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applicat |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A • High Input Impedance • Fast Switching • Short Cirrui |
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ON Semiconductor |
Power IGBT • Low Conduction Loss and Optimized Switching • Maximum Junction Temperature − TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • 100% of the Parts are Dynamically Tested • Short Circuit Rated • RoHS |
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ON Semiconductor |
IGBT • Maximum Junction Temperature TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Smooth and Optimized Switching • Low Switching Loss • RoHS Compliant Applications • Boost and Inverter in Solar Syste |
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ON Semiconductor |
N-Channel IGBT |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−Efficient • Tight Parameter Distribution • High Input Impedance • 100% of t |
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ON Semiconductor |
IGBT a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applicat |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • Tight Parameter Distribution • High Input Impedance |
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ON Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.69 V (Typ.) @ IC = 75 A • Fast Switching • Tighten Parameter Distribution • Th |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 100 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • Tight Parameter Distribution • High Input Impedance |
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ON Semiconductor |
IGBT • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Dynamically Tested • Sho |
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ON Semiconductor |
Power IGBT • Maximum Junction Temperature − TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Smooth and Optimized Switching • Low Switching Loss • RoHS Compliant Applications • Boost and Inverter in Solar Sys |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−Efficient • Tight Parameter Distribution • High Input Impedance • 100% of t |
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ON Semiconductor |
IGBT • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−Efficient • Tight Parameter Distribution • High Input Impedance • 100% of t |
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