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FGY100T120SWD |
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| Part Number | FGY100T120SWD |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high−eff... |
| Features |
• Maximum Junction Temperature TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Smooth and Optimized Switching • Low Switching Loss • RoHS Compliant Applications • Boost and Inverter in Solar System • UPS • Energy Storage System MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 1200 V VGES ±20 V ±30 V Collector Current TC = 25°C IC (Note 1) 200 A TC = 100°C Power Dissipation TC = 25°C PD TC = 100°C... |
| Document |
 FGY100T120SWD Data Sheet
PDF 280.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FGY100T120RWD |
ON Semiconductor |
Power IGBT |
|
| 2 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 3 | FGY120T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 4 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGY160T65SPD-F085 |
ON Semiconductor |
IGBT |
|