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AFGY160T65SPD-B4 |
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| Part Number | AFGY160T65SPD-B4 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A AFGY160T65SPD-B4 Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 ... |
| Features |
• AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−Efficient • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Dynamically Tested • Short Circuit Ruggedness > 6 ms @ 25°C • Copacked with Soft, Fast Recovery Extremefast Diode • This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding... |
| Document |
 AFGY160T65SPD-B4 Data Sheet
PDF 2.53MB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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