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FGY100T120RWD |
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| Part Number | FGY100T120RWD |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching control... |
| Features |
• Low Conduction Loss and Optimized Switching • Maximum Junction Temperature − TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • 100% of the Parts are Dynamically Tested • Short Circuit Rated • RoHS Compliant Applications • Motor Control • UPS • General Application Requiring High Power Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 1200 V VGES ±20 ±30 Collector Current Power Dissipation Pulsed Collect... |
| Document |
 FGY100T120RWD Data Sheet
PDF 279.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FGY100T120SWD |
ON Semiconductor |
IGBT |
|
| 2 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 3 | FGY120T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 4 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGY160T65SPD-F085 |
ON Semiconductor |
IGBT |
|