FGY75T95LQDT |
Part Number | FGY75T95LQDT |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diode. Features • Maximum Junction Temperature... |
Features |
• Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A • Fast Switching • Tighten Parameter Distribution • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES VGES 950 V ±20 V ±30 Collector Current @TC = 25°C IC @TC = 100°C 150 A 75 Pulsed Collector Current (Note 1) ILM 225 ... |
Document |
FGY75T95LQDT Data Sheet
PDF 660.17KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FGY75T95SQDT |
ON Semiconductor |
IGBT | |
2 | FGY75T120SQDN |
ON Semiconductor |
IGBT | |
3 | FGY75T120SWD |
ON Semiconductor |
Power IGBT | |
4 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT | |
5 | FGY75N60SMD |
ON Semiconductor |
IGBT |