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FGY75T120SWD |
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| Part Number | FGY75T120SWD |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−effi... |
| Features |
• Maximum Junction Temperature − TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Smooth and Optimized Switching • Low Switching Loss • RoHS Compliant Applications • Boost and Inverter in Solar System • UPS • Energy Storage System MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 1200 V VGES ±20 ±30 Collector Current Power Dissipation Pulsed Collector Current TC = 25°C IC TC = 100°C TC = 25°C PD TC = 100... |
| Document |
 FGY75T120SWD Data Sheet
PDF 282.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FGY75T120SQDN |
ON Semiconductor |
IGBT |
|
| 2 | FGY75T95LQDT |
ON Semiconductor |
IGBT |
|
| 3 | FGY75T95SQDT |
ON Semiconductor |
IGBT |
|
| 4 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 5 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|