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FGY75T120SQDN |
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| Part Number | FGY75T120SQDN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering... |
| Features |
a robust and
cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature: TJ = 175°C • Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 75 A • 100% of the Parts Tested for ILM(1) • Soft Fast Reverse Recover... |
| Document |
 FGY75T120SQDN Data Sheet
PDF 551.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FGY75T120SWD |
ON Semiconductor |
Power IGBT |
|
| 2 | FGY75T95LQDT |
ON Semiconductor |
IGBT |
|
| 3 | FGY75T95SQDT |
ON Semiconductor |
IGBT |
|
| 4 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 5 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|