| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
IRFR120N • 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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ON Semiconductor |
MTW20N50E perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 500 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Gate−Source Voltage − Continuous − N |
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Fairchild Semiconductor |
20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Ju |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Swi |
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Fairchild Semiconductor |
40A 600V UFS Series N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The IGBT is i |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used |
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Alpha & Omega Semiconductors |
20A N-Channel MOSFET e recovery dv/dt ID IDM IAR EAR EAS dv/dt 20 20* 12 12* 80 6.5 630 1260 5 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 32 320NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol |
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NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON) ID 650 190 20 V mΩ A Application ● Powe |
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Alpha & Omega Semiconductors |
20A N-Channel MOSFET ssipation B Derate above 25oC PD 50 0.4 40 0.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Symbol Maxim |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption |
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ON Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mW • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested • This Device is Pb−Free Applications • Solar Inverter • AC−DC Power Supply |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used i |
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Fairchild Semiconductor |
HGTG20N60A4D of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 220 nC) • Low Effective Output Capacitance (typ. Coss = 258 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemptio |
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ON Semiconductor |
N-Channel MOSFET • Typ. RDS(on) = 20 mW @ VGS = 15 V • Typ. RDS(on) = 16 mW @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 200 nC) • Low Effective Output Capacitance (typ. Coss = 295 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Devic |
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ON Semiconductor |
N-Channel MOSFET • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100% UIL Tested • RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless o |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100% UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, P |
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Taiwan Semiconductor |
N-Channel Power MOSFET ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175°C Operating junction temperature ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RD |
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